POLAR HALL-EFFECT AND MAGNETORESISTANCE IN N-SILICON

被引：2
|
作者：
HEINRICH, H
KRIECHBAUM, M
机构：
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1972年 / 50卷 / 01期
关键词：
D O I：
10.1002/pssb.2220500161
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：K45 / +
页数：1
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