METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH FOR HIGH ELECTRON-MOBILITY TRANSISTOR LSIS

We report on metalorganic vapor phase epitaxy (MOVPE) for high electron mobility transistor (HEMT) LSI. It is shown that the layers grown by a low-pressure barrel reactor with a large-area growth capacity (twelve 3-inch wafers) have an excellent reproducibility both for thickness and donor concentration with nearly +/- 1%. We applied MOVPE-grown wafers to fabricate a HEMT 64 kb SRAM with 0.6-mu-m gates and obtained a typical address access time of 1.2 ns at a power dissipation of 5.9 W.