AIGAAS EPITAXIAL-GROWTH ON (111)B-SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY

被引：20
|
作者：
KATO, K
HASUMI, Y
KOZEN, A
TEMMYO, J
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 05期
关键词：
D O I：
10.1063/1.342883
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1947 / 1951
页数：5
相关论文
共 50 条
  • [1] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAINASP/GAAS
    KNAUER, A
    ERBERT, G
    GRAMLICH, S
    OSTER, A
    RICHTER, E
    ZEIMER, U
    WEYERS, M
    JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (11) : 1655 - 1658
  • [2] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF IN1-XGAXP
    YOSHINO, J
    IWAMOTO, T
    KUKIMOTO, H
    JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 74 - 78
  • [3] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF LITHIUM-DOPED ZNS
    MITSUISHI, I
    SHIBATANI, J
    KAO, MH
    YAMAMOTO, M
    YOSHINO, J
    KUKIMOTO, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (05): : L733 - L735
  • [4] EPITAXIAL-GROWTH OF ALGAINP LATTICE-MATCHED TO GAASP SUBSTRATES BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
    MINAGAWA, S
    ISHITANI, Y
    TANAKA, T
    JOURNAL OF CRYSTAL GROWTH, 1993, 126 (04) : 539 - 543
  • [5] EPITAXIAL-GROWTH OF ZNS GROWN AT LOW-TEMPERATURES BY ATMOSPHERIC-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY
    YODO, T
    UEDA, K
    MORIO, K
    YAMASHITA, K
    TANAKA, S
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (11) : 5674 - 5681
  • [6] DIRECT EPITAXIAL-GROWTH OF (ALGA)AS/GAAS QUANTUM WIRES BY ORIENTATION-DEPENDENT METALORGANIC VAPOR-PHASE EPITAXY
    BERTRAM, D
    SPILL, B
    STOLZ, W
    GOBEL, EO
    SOLID-STATE ELECTRONICS, 1994, 37 (4-6) : 591 - 596
  • [7] GAAS VAPOR-PHASE EPITAXIAL-GROWTH
    HARADA, H
    REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1972, 20 (11-1): : 1077 - 1086
  • [8] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH AND STRUCTURAL CHARACTERIZATION OF GAAS/INP HETEROSTRUCTURES
    ATTOLINI, G
    FRANZOSI, P
    PELOSI, C
    LAZZARINI, L
    SALVIATI, G
    JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (02) : 153 - 158
  • [9] PHOTON-ASSISTED METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF UNDOPED GAAS
    VERMAAK, JS
    GOUWS, D
    LEITCH, AWR
    RAUBENHEIMER, D
    SOUTH AFRICAN JOURNAL OF SCIENCE, 1988, 84 (08) : 681 - 682
  • [10] GROWTH OF INN FILMS ON GAAS(111) AND GAP(111) SUBSTRATES BY MICROWAVE-EXCITED METALORGANIC VAPOR-PHASE EPITAXY
    GUO, QX
    OGAWA, H
    YAMANO, H
    YOSHIDA, A
    APPLIED PHYSICS LETTERS, 1995, 66 (06) : 715 - 717
12345