METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH FOR HIGH ELECTRON-MOBILITY TRANSISTOR LSIS

被引：1

作者：

OHORI, T ^{[1
]}

TOMESAKAI, N ^{[1
]}

SUZUKI, M ^{[1
]}

KASAI, K ^{[1
]}

KOMENO, J ^{[1
]}

机构：

[1] FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 7A期

关键词：

MOVPE; LARGE-AREA GROWTH; HEMT; LSI; SRAM;

D O I：

10.1143/JJAP.31.L826

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on metalorganic vapor phase epitaxy (MOVPE) for high electron mobility transistor (HEMT) LSI. It is shown that the layers grown by a low-pressure barrel reactor with a large-area growth capacity (twelve 3-inch wafers) have an excellent reproducibility both for thickness and donor concentration with nearly +/- 1%. We applied MOVPE-grown wafers to fabricate a HEMT 64 kb SRAM with 0.6-mu-m gates and obtained a typical address access time of 1.2 ns at a power dissipation of 5.9 W.

引用

页码：L826 / L828

页数：3

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