共 50 条
- [21] VERIFICATION OF THE MODEL FOR PHOSPHORUS DIFFUSION FROM OXIDE SOURCES INTO SILICON. Electron Technology (Warsaw), 1980, 13 (1-2): : 3 - 17
- [24] 2 PECULIARITIES OF PHOSPHORUS DIFFUSION IN SILICON-CRYSTALS AND IN THE GLAS LAYER THAT FORMS ON THE SILICON CRYSTAL ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-LEIPZIG, 1987, 268 (06): : 1247 - 1250
- [26] DIFFUSION OF PHOSPHORUS IN SILICON FROM A LAYER DOPED BY IMPLANTATION OF LARGE ION DOSES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (11): : 1380 - 1382
- [28] Diffusion of sulfur, manganese, phosphorus, silicon, and carbon through molten iron INDUSTRIAL AND ENGINEERING CHEMISTRY, 1932, 24 : 993 - 998