CHANGES IN THE THERMAL-OXIDATION OF GALLIUM-ARSENIDE INDUCED BY ION-IMPLANTATION

被引：1
|
作者：
BUTCHER, DN
SEALY, BJ
机构：
来源：
ELECTRONICS LETTERS | 1979年 / 15卷 / 02期
关键词：
D O I：
10.1049/el:19790036
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：51 / 52
页数：2
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