CHANGES IN THE THERMAL-OXIDATION OF GALLIUM-ARSENIDE INDUCED BY ION-IMPLANTATION

被引：1
|
作者：
BUTCHER, DN
SEALY, BJ
机构：
来源：
ELECTRONICS LETTERS | 1979年 / 15卷 / 02期
关键词：
D O I：
10.1049/el:19790036
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：51 / 52
页数：2
相关论文
共 50 条
  • [1] ION-IMPLANTATION INTO GALLIUM-ARSENIDE
    ANHOLT, R
    BALASINGAM, P
    CHOU, SY
    SIGMON, TW
    DEAL, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) : 3429 - 3438
  • [2] THERMAL-OXIDATION OF GALLIUM-ARSENIDE
    MONTEIRO, OR
    EVANS, JW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (01): : 49 - 54
  • [3] TRENDS IN ION-IMPLANTATION IN GALLIUM-ARSENIDE
    HARA, T
    INADA, T
    [J]. SOLID STATE TECHNOLOGY, 1979, 22 (11) : 69 - 74
  • [4] SHALLOW ION-IMPLANTATION IN GALLIUM-ARSENIDE
    GRANGE, JD
    BARTLE, DC
    BROWN, BR
    DINEEN, C
    KNIGHT, KS
    MEDLAND, JD
    WICKENDEN, DK
    DOWSETT, MG
    [J]. VACUUM, 1984, 34 (1-2) : 199 - 201
  • [5] SPUTTERING DURING ION-IMPLANTATION INTO GALLIUM-ARSENIDE
    FRITZSCHE, CR
    ROTHEMUND, W
    [J]. APPLIED PHYSICS, 1975, 7 (01): : 39 - 44
  • [6] THERMAL-OXIDATION OF GALLIUM-ARSENIDE IN AN AMMONIA ATMOSPHERE
    MITTOVA, IY
    PSHESTANCHIK, VP
    LAVRUSHINA, SS
    MALTSEVA, OA
    [J]. INORGANIC MATERIALS, 1994, 30 (08) : 946 - 947
  • [7] ION-IMPLANTATION IN GALLIUM-ARSENIDE MESFET TECHNOLOGY
    DESOUZA, JP
    SADANA, DK
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (01) : 166 - 175
  • [8] ION-IMPLANTATION AND THERMAL-OXIDATION
    SRINIVASAN, V
    MEIER, GH
    MCCORMICK, AW
    RAI, AK
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 16 (2-3): : 293 - 300
  • [9] ION-IMPLANTATION AND THERMAL-OXIDATION
    SRINIVASAN, V
    MEIER, GH
    MCCORMICK, AW
    RAI, AK
    [J]. JOURNAL OF METALS, 1985, 37 (08): : A45 - A45
  • [10] ZINC ION-IMPLANTATION AS A PREDEPOSITION PROCESS IN GALLIUM-ARSENIDE
    BOISSY, MC
    DIGUET, D
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) : 1505 - 1509
12345