共 50 条
- [1] ION-IMPLANTED PARA-TYPE HIGH-RESISTIVITY LAYERS WITH HIGH-TEMPERATURE TREATMENT [J]. DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1976, 29 (04): : 481 - 483
- [3] WEAK-FIELD MAGNETORESISTANCE IN PARA-TYPE SILICON [J]. PHYSICAL REVIEW, 1958, 109 (04): : 1098 - 1102
- [5] EFFECT OF HALL IN PARA INSB HIGH-RESISTIVITY SAMPLES [J]. DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1973, 26 (12): : 1603 - 1606
- [7] RECOMBINATION IN HIGH-RESISTIVITY SILICON [J]. SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (05): : 1306 - &
- [8] PHOTOCATHODIC HYDROGENATION OF PARA-TYPE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (02) : 1099 - 1101
- [9] PROCESSING OF HIGH-RESISTIVITY SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (08) : C328 - C328