EFFECT OF HALL IN PARA INSB HIGH-RESISTIVITY SAMPLES

被引：0

作者：

BAEV, IA ^{[1
]}

机构：

[1] HIGHER INST MIN GEOL, DEPT PHYS, SOFIA, BULGARIA

来源：

DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE | 1973年 / 26卷 / 12期

关键词：

D O I：

暂无

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：1603 / 1606

页数：4

共 50 条

[1] STUDY OF ELECTRICAL BREAKDOWN PECULIARITIES IN HIGH-RESISTIVITY COMPENSATED PARA-INSB
CHIGOGIDZE, ZN
KHUCHUA, NP
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1979, 54 (02): : 773 - 781
[2] HALL-EFFECT MEASUREMENTS ON HIGH-RESISTIVITY MATERIA
VOLIN, K
VOGEL, R
JOHNSON, R
WOOD, C
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03): : 317 - 318
[3] AUTOMATED, HIGH-RESISTIVITY HALL-EFFECT AND PHOTOELECTRONIC APPARATUS
LOOK, DC
FARMER, JW
[J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1981, 14 (04): : 472 - 477
[4] HOT-ELECTRON EFFECTS IN HIGH-RESISTIVITY INSB
ASMONTAS, S
SUBACIUS, L
VALUSIS, G
[J]. ACTA PHYSICA POLONICA A, 1993, 84 (04) : 717 - 720
[5] CHARACTERIZATION OF HIGH-RESISTIVITY SILICON BY HALL MEASUREMENTS
BARON, R
YOUNG, MH
NEELAND, JK
MARSH, OJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : C113 - C113
[6] INSTABILITY OF CURRENT IN HIGH-RESISTIVITY SAMPLES OF P-TYPE INSB SUBJECTED TO CONTINUOUS FIELDS
GIGIBERIYA, PG
MIRIANAS.SM
NANOBASH.DI
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (07): : 1285 - +
[7] FIELD EFFECT MEASUREMENTS ON HIGH-RESISTIVITY PARA-TYPE SILICON
GERLICH, D
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (JUL) : 837 - &
[8] INVESTIGATION OF THE PHOTOCONDUCTIVITY OF HIGH-RESISTIVITY P-TYPE INSB
MIRIANASHVILI, SM
TUMANISHVILI, EP
CHIKOVANI, NN
KHAVTASI, LG
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (03): : 363 - 363
[9] SOME PROPERTIES OF A GRADIENT INSTABILITY OF CURRENT IN HIGH-RESISTIVITY COMPENSATED SAMPLES OF P-TYPE INSB
MIRIANAS.SM
NANOBASH.DI
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (12): : 1956 - &
[10] THE ACOUSTOELECTRIC INTERACTION FOR HIGH-RESISTIVITY SEMICONDUCTOR SAMPLES
ESTRADAVAZQUEZ, H
[J]. IEEE TRANSACTIONS ON SONICS AND ULTRASONICS, 1985, 32 (01): : 106 - 106

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