FIELD EFFECT MEASUREMENTS ON HIGH-RESISTIVITY PARA-TYPE SILICON

被引：3

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作者：

GERLICH, D

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1962年 / 23卷 / JUL期

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D O I：

10.1016/0022-3697(62)90141-5

中图分类号：

O6 [化学];

学科分类号：

0703 ;

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页码：837 / &

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