LARGE NEGATIVE RESISTANCE IN SILICON P-I-N DIODES AT 300 DEGREES K

被引：0
|
作者：
AFANASJE.J
NORDMAN, JE
机构：
来源：
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1967年 / 55卷 / 11期
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D O I：
10.1109/PROC.1967.6059
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：2043 / &
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