CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS SCHOTTKY BARRIERS

被引：19
|
作者：
SINGH, J [1 ]
COHEN, MH [1 ]
机构：
[1] UNIV CHICAGO,DEPT PHYS,CHICAGO,IL 60637
来源：
JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 01期
关键词：
D O I：
10.1063/1.327389
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：413 / 418
页数：6
相关论文
共 50 条
  • [31] NEW TECHNIQUES OF CAPACITANCE-VOLTAGE MEASUREMENTS OF SEMICONDUCTOR JUNCTIONS
    LI, MF
    SAH, CT
    SOLID-STATE ELECTRONICS, 1982, 25 (02) : 95 - 99
  • [32] CAPACITANCE-VOLTAGE MEASUREMENTS WITH A MERCURY-SILICON DIODE
    SEVERIN, PJ
    POODT, GJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) : 1384 - &
  • [33] Capacitance-voltage characteristics of organic Schottky diode with and without deep traps
    Sharma, Akanksha
    Kumar, Pramod
    Singh, Budhi
    Chaudhuri, Sumita Ray
    Ghosh, Subhasis
    APPLIED PHYSICS LETTERS, 2011, 99 (02)
  • [34] Correlation between current-voltage and capacitance-voltage characteristics of Schottky barrier diodes
    Sharp Corp, Nara, Japan
    IEEE Trans Electron Devices, 9 (2032-2036):
  • [35] Study of the characteristics current-voltage and capacitance-voltage in nitride GaAs Schottky diode
    Rabehi, Abdelaziz
    Amrani, Mohamed
    Benamara, Zineb
    Akkal, Boudali
    Hatem-Kacha, Arslane
    Robert-Goumet, Christine
    Monier, Guillaume
    Gruzza, Bernard
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2015, 72 (01):
  • [36] Correlation between current-voltage and capacitance-voltage characteristics of schottky barrier diodes
    Zhu, Y
    Ishimaru, Y
    Takahashi, N
    Shimizu, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (09) : 2032 - 2036
  • [37] A study of capacitance-voltage characteristics of amorphous carbon multilayer nanostructures
    Baranov, AM
    Varfolomeev, AE
    Nefedov, AA
    Filippov, VI
    Calliari, L
    Speranza, G
    DIAMOND AND RELATED MATERIALS, 2004, 13 (03) : 389 - 392
  • [38] CAPACITANCE MEASUREMENTS ON AU-GAAS SCHOTTKY BARRIERS
    SENECHAL, RR
    BASINSKI, J
    JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4581 - +
  • [39] DETERMINATION OF MINORITY CARRIER DIFFUSION COEFFICIENT FROM CAPACITANCE-VOLTAGE CHARACTERISTICS OF Au/Ge-SCHOTTKY BARRIERS.
    Serin, N.
    Applied Physics A: Solids and Surfaces, 1985, A 36 (04): : 209 - 212
  • [40] Complementary evaluation of potential barriers in semiconducting barium titanate by electrostatic force microscopy and capacitance-voltage measurements
    Prohinig, Jennifer M.
    Huetner, Johanna
    Reichmann, Klaus
    Bigl, Stephan
    SCRIPTA MATERIALIA, 2022, 214
12345