CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS SCHOTTKY BARRIERS

被引：19
|
作者：
SINGH, J [1 ]
COHEN, MH [1 ]
机构：
[1] UNIV CHICAGO,DEPT PHYS,CHICAGO,IL 60637
来源：
JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 01期
关键词：
D O I：
10.1063/1.327389
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：413 / 418
页数：6
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