CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS SCHOTTKY BARRIERS

被引：19

作者：

SINGH, J ^{[1
]}

COHEN, MH ^{[1
]}

机构：

[1] UNIV CHICAGO,DEPT PHYS,CHICAGO,IL 60637

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 01期

关键词：

D O I：

10.1063/1.327389

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：413 / 418

页数：6

共 50 条

[1] CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS SCHOTTKY BARRIERS - COMMENT
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[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 517 - 518
[2] A THEORY OF CAPACITANCE-VOLTAGE MEASUREMENTS ON AMORPHOUS-SILICON SCHOTTKY BARRIERS
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[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (02): : 167 - 176
[3] CAPACITANCE-VOLTAGE MEASUREMENTS ON INAS AND PBTE SCHOTTKY BARRIERS - EFFECTS OF INVERTED SURFACE
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[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1971, 16 (03): : 434 - &
[4] CHARACTERIZATION OF HYDROGENATED AMORPHOUS-SILICON BY CAPACITANCE-VOLTAGE AND SURFACE PHOTOVOLTAGE MEASUREMENTS USING LIQUID SCHOTTKY BARRIERS
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ISHIDA, T
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[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1916 - 1927
[5] Electrochemical schottky characteristics of ZnO for capacitance-voltage measurements
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[J]. Journal of Electronic Materials, 2001, 30 : L40 - L42
[6] Electrochemical Schottky characteristics of ZnO for capacitance-voltage measurements
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (12) : L40 - L42
[7] MODELING OF HYDROGENATED AMORPHOUS-SILICON SCHOTTKY STRUCTURES USING CAPACITANCE-VOLTAGE AND CONDUCTANCE-VOLTAGE MEASUREMENTS
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[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 928 - 931
[8] SURFACE STATE AND INTERFACE EFFECTS ON CAPACITANCE-VOLTAGE RELATIONSHIP IN SCHOTTKY BARRIERS
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[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (03): : 455 - &
[9] SURFACE STATE AND INTERFACE EFFECTS ON CAPACITANCE-VOLTAGE RELATIONSHIP IN SCHOTTKY BARRIERS
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[10] CALCULATION OF CAPACITANCE-VOLTAGE CHARACTERISTICS OF HYDROGENATED AMORPHOUS-SILICON SCHOTTKY DIODES
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[J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 487 - 489

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