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Electrochemical schottky characteristics of ZnO for capacitance-voltage measurements

被引：0
|
作者：
C. E. Stutz
机构：
[1] Air Force Research Laboratory,
[2] Materials and Manufacturing Directorate,undefined
来源：
Journal of Electronic Materials | 2001年 / 30卷
关键词：
ZnO; CV measurements; Schottky contacts;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Water-based Schottky contacts are examined for flatband potential on bulk single-crystal ZnO material. The Zn and O faces are studied as well as the a-axis. Also, depletion capacitance-voltage (CV) measurements are made on a bulk ZnO sample that has been exposed to extensive electron irradiation. The CV measurements show that the ZnO (O-face) surface is only slightly affected by electron irradiation up to 2 MeV.
引用
收藏
页码：L40 / L42
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