APPLICATION OF ELECTROCHEMICAL CAPACITANCE-VOLTAGE MEASUREMENTS FOR PROFILING IN SILICON

被引：6
|
作者：
SIEBER, N [1 ]
WULF, HE [1 ]
ROSER, D [1 ]
KURPS, P [1 ]
机构：
[1] HALBLEITERWERK GMBH,O-1201 FRANKFURT,GERMANY
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1991年 / 126卷 / 02期
关键词：
D O I：
10.1002/pssa.2211260234
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：K123 / K127
页数：5
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