COMPARISON OF EFFECTIVE A PARAMETERS FOR MULTI-QUANTUM-WELL ELECTROABSORPTION MODULATORS

被引：6
|
作者：
SUZUKI, N
HIRAYAMA, Y
机构：
[1] Materials and Devices Research Laboratories, Toshiba Research and Development Center, Komukai Toshiba-cho, Saiwai-ku
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 09期
关键词：
D O I：
10.1109/68.414684
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new effective alpha parameter appropriate for evaluating the transmission performance of multiquantum-well electroabsorption (MQW-EA) modulators is proposed. It is defined by the ratio of the phase change to the toss change between the ON voltage and the voltage at which the exciton peak reaches the wavelength of the light source. Simulation reveals that among various effective alpha parameters it has the best correlation with the equivalent alpha parameter obtained from the transmission performance.
引用
收藏
页码：1007 / 1009
页数：3
相关论文
共 50 条
  • [31] QUANTUM-WELL EXCITON POLARITON EMISSION FROM MULTI-QUANTUM-WELL WIRE STRUCTURES
    KOHL, M
    HEITMANN, D
    GRAMBOW, P
    PLOOG, K
    SUPERLATTICES AND MICROSTRUCTURES, 1989, 5 (02) : 235 - 238
  • [32] Characteristics of intermixed InGaAs/InGaAsP multi-quantum-well structure
    Yeo, Deok Ho
    Yoon, Kyung Hun
    Kim, Sung June
    1600, JJAP, Tokyo, Japan (39): : 1032 - 1034
  • [33] DEEP LEVELS IN GAAS ALGAAS MULTI-QUANTUM-WELL STRUCTURES
    ARBAOUI, A
    TUCK, B
    PAULL, CJ
    HENINI, M
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1990, 1 (02) : 75 - 78
  • [34] PHOTOINDUCED INTERSUBBAND ABSORPTION IN UNDOPED MULTI-QUANTUM-WELL STRUCTURES
    OLSZAKIER, M
    EHRENFREUND, E
    COHEN, E
    BAJAJ, J
    SULLIVAN, GJ
    PHYSICAL REVIEW LETTERS, 1989, 62 (25) : 2997 - 3000
  • [35] CALCULATED GAIN AND SPONTANEOUS SPECTRA OF MULTI-QUANTUM-WELL LASERS
    OHTOSHI, T
    UOMI, K
    CHINONE, N
    KAJIMURA, T
    MURAYAMA, Y
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (03) : 992 - 994
  • [36] Plasmon gain in HgTe/CdHgTe multi-quantum-well heterostructures
    Rudakov, A. O.
    Aleshkin, V. Ya
    Gavrilenko, V., I
    JOURNAL OF OPTICS, 2022, 24 (07)
  • [37] Characteristics of intermixed InGaAs/InGaAsP multi-quantum-well structure
    Yeo, DH
    Yoon, KH
    Kim, SJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (3A): : 1032 - 1034
  • [38] HIGH-EFFICIENCY ELECTROABSORPTION IN QUATERNARY AIGAINAS QUANTUM-WELL OPTICAL MODULATORS
    WAKITA, K
    KOTAKA, I
    ASAI, H
    NOJIMA, S
    MIKAMI, O
    ELECTRONICS LETTERS, 1988, 24 (21) : 1324 - 1325
  • [39] Design considerations of intra-step SiGeSn/GeSn quantum well electroabsorption modulators
    Chen, Zhichao
    Ikonic, Zoran
    Indjin, Dragan
    Kelsall, Robert W.
    JOURNAL OF APPLIED PHYSICS, 2021, 130 (15)
  • [40] RESONANT TUNNELING IN THIN-BARRIER MULTIPLE-QUANTUM-WELL ELECTROABSORPTION MODULATORS
    MORGAN, RA
    CHIROVSKY, LMF
    LEIBENGUTH, RE
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1992, 9 (06) : 858 - 864
12345