DEEP LEVELS IN GAAS ALGAAS MULTI-QUANTUM-WELL STRUCTURES

The study of the behaviour of deep traps in AlxGa1-xAs/n-GaAs multi-quantum well structures with three different well widths (1.7, 2.5 and 3.4 nm) has been performed using deep level transient spectroscopy. The measurements showed the presence of two closely spaced levels in each structure in the temperature range 160 to 270 K. It was found that as the GaAs well width increased, the apparent activation energies and the concentrations of both levels decreased. It is seen that in the 1.7 nm well samples, the lower temperature level is dominant, but in the 2.4 and 3.4 nm well samples, both levels were comparable in concentration. © 1990 Chapman and Hall Ltd.