Plasmon gain in HgTe/CdHgTe multi-quantum-well heterostructures

被引：4
|
作者：
Rudakov, A. O. [1 ]
Aleshkin, V. Ya [1 ,2 ]
Gavrilenko, V., I [1 ,2 ]
机构：
[1] Inst Phys Microstruct RAS, Dept Semicond Phys, Nizhnii Novgorod 603950, Russia
[2] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia
来源：
JOURNAL OF OPTICS | 2022年 / 24卷 / 07期
关键词：
HgTe; CdHgTe multi-quantum-well heterostructure; 2D plasmons; plasmon gain;
D O I：
10.1088/2040-8986/ac723b
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The work is devoted to the theoretical study of plasmon gain in HgTe/CdHgTe multi-quantum-well heterostructures. The spectra of plasmons and plasmon gain are found in structures with 2-8 quantum wells (QWs) under the condition of inverse band population. A nonmonotonic increase in the plasmon gain with an increase in the number of QWs is shown. The dependence of the threshold concentration of nonequilibrium carriers for stimulated plasmon emission on the number of QWs in structures with 1-8 QWs has been studied.
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收藏
页数：10
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