FULLY-DEPLETED SUBMICRON SOI FOR RADIATION-HARDENED APPLICATIONS

被引：20
|
作者：
BRADY, FT
SCOTT, T
BROWN, R
DAMATO, J
HADDAD, NF
机构：
[1] Loral Federal Systems 9500 Godwin Dr., Manassas
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 06期
关键词：
Random access storage;
D O I：
10.1109/23.340580
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Using fully-depleted technology, the Loral 256K SOI SRAM has demonstrated under worst case SEU and prompt dose testing an LET threshold of at least 80 MeV*cm ($) over cap 2/mg, and a prompt dose rate upset level of greater then 4E10 rad(Si)/s, respectively, without design hardening. Total dose testing on transistors fabricated on enhanced bond and etchback SOI substrates indicates over 100 krad(Si) capability. Together, these results represent the first description of a fully depleted SOI technology for all radiation-hardened applications except extreme total dose.
引用
收藏
页码：2304 / 2309
页数：6
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