TRAPPING OF DEUTERIUM IN OXYGEN-IMPLANTED ALUMINUM

被引:10
|
作者
MYERS, SM
FOLLSTAEDT, DM
机构
关键词
D O I
10.1016/0022-3115(87)90353-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:322 / 325
页数:4
相关论文
共 50 条
  • [41] Local mode spectroscopy of oxygen-implanted GaAs MBE layers
    Alt, HC
    Mussig, H
    Brugger, H
    SEMICONDUCTING AND INSULATING MATERIALS, 1996: PROCEEDINGS OF THE 9TH CONFERENCE ON SEMICONDUCTING AND INSULATING MATERIALS (SIMC'96), 1996, : 155 - 158
  • [42] Electron Emission from the Electronic States of Oxygen Precipitates in Oxygen-Implanted Silicon
    Danilov, Denis
    Vyvenko, Oleg
    Loshachenko, Anton
    Sobolev, Nikolay
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2022, 219 (07):
  • [43] CATHODOLUMINESCENCE OF OXYGEN-IMPLANTED ZINC-DOPED GALLIUM PHOSPHIDE
    LACEY, SD
    LARGE, LN
    WIGHT, DR
    ELECTRONICS LETTERS, 1969, 5 (10) : 203 - &
  • [44] DEFECT TRAPPING OF ION-IMPLANTED DEUTERIUM IN FE
    MYERS, SM
    PICRAUX, ST
    STOLTZ, RE
    JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5710 - 5719
  • [45] THE CHARACTERISTICS OF CMOS DEVICES IN OXYGEN-IMPLANTED SILICON-ON-INSULATOR STRUCTURES
    MAO, BY
    SUNDARESAN, R
    CHEN, CED
    MATLOUBIAN, M
    POLLACK, G
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (05) : 629 - 633
  • [46] Trapping and thermal diffusion for energetic deuterium implanted into SiC
    Sanchez, F. J.
    Morono, A.
    Malo, M.
    Hodgson, E. R.
    NUCLEAR MATERIALS AND ENERGY, 2016, 9 : 383 - 387
  • [47] TRAPPING OF DEUTERIUM IN ARGON-IMPLANTED NICKEL.
    Frank, R.C.
    Rehn, L.E.
    Baldo, P.
    Journal of Applied Physics, 1985, 57 (03): : 845 - 848
  • [48] DEFECT TRAPPING OF ION-IMPLANTED DEUTERIUM IN COPPER
    BESENBACHER, F
    NIELSEN, BB
    MYERS, SM
    JOURNAL OF APPLIED PHYSICS, 1984, 56 (12) : 3384 - 3393
  • [49] DEFECT TRAPPING OF ION-IMPLANTED DEUTERIUM IN NICKEL
    BESENBACHER, F
    BOTTIGER, J
    MYERS, SM
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) : 3536 - 3546
  • [50] Identification of vacancy-oxygen complexes in oxygen-implanted silicon probed with slow positrons
    Fujinami, M
    Miyagoe, T
    Sawada, T
    Suzuki, R
    Ohdaira, T
    Akahane, T
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (07) : 3404 - 3410