DEFECT TRAPPING OF ION-IMPLANTED DEUTERIUM IN COPPER

被引：38
|
作者：
BESENBACHER, F [1 ]
NIELSEN, BB [1 ]
MYERS, SM [1 ]
机构：
[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185
来源：
JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 12期
关键词：
D O I：
10.1063/1.333903
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3384 / 3393
页数：10
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