MECHANISM OF ION-INDUCED CRYSTALLIZATION OF SILICON

被引：0
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作者：
NOVIKOV, AP
GUSAKOV, GA
KOMAROV, FF
TOLSTYKH, VP
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来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1992年 / 26卷 / 10期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1034 / 1036
页数：3
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