A molecular dynamics study of ion-induced defects on a silicon stepped surface

被引：6
|
作者：
Mazzone, AH [1 ]
机构：
[1] CNR, Ist Lamel, I-40129 Bologna, Italy
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2000年 / 160卷 / 01期
关键词：
molecular dynamics; ion-induced defects; silicon; stepped surface;
D O I：
10.1016/S0168-583X(99)00580-7
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Computer simulations of the type molecular dynamics (MD) are used to study the effects of a secondary generation of recoils on a silicon stepped surface. Dimers and subsurface atoms are displaced with a low kinetic energy (E-k less than or equal to 10 eV) and the evolution of the irradiated region is simulated with classical MD using standard three-body potentials. Two main types of defects have been found. These are vacancies, generated by sputtering of dimers and of second layers atoms, and interstitials due to the displacements of third-layer atoms. The dependence of these defects on the structural properties of the surface and the effects of E-k and of the lattice temperature have been analyzed. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：38 / 48
页数：11
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