TEMPERATURE-DEPENDENCE OF PHOTOCONDUCTIVITY IN P-TYPE COBALT DOPED SILICON

被引：0

作者：

WONG, DC ^{[1
]}

PENCHINA, CM ^{[1
]}

机构：

[1] UNIV MASSACHUSETTS,AMHERST,MA 01003

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1974年 / 19卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：298 / 298

页数：1

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