INVESTIGATION OF PHOTOCONDUCTIVITY OF COBALT-DOPED SILICON

被引：0
|
作者：
LEBEDEV, AA [1 ]
AKHMEDOVA, MM [1 ]
机构：
[1] AF IOFFE ENGN PHYS INST,LENINGRAD,USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 9卷 / 03期
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D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
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页码：279 / 281
页数：3
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