TEMPERATURE-DEPENDENCE OF PHOTOCONDUCTIVITY IN P-TYPE COBALT DOPED SILICON

被引：0
|
作者：
WONG, DC [1 ]
PENCHINA, CM [1 ]
机构：
[1] UNIV MASSACHUSETTS,AMHERST,MA 01003
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1974年 / 19卷 / 03期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：298 / 298
页数：1
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