LIQUID PHASE EPITAXIAL GROWTH OF GA1-XALXAS

被引:38
|
作者
WOODALL, JM
RUPPRECHT, H
REUTER, W
机构
关键词
D O I
10.1149/1.2412123
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:899 / +
页数:1
相关论文
共 50 条
  • [1] LIQUID-PHASE EPITAXIAL-GROWTH OF GA1-XALXAS ON CHANNELED SUBSTRATES
    FUNAKOSHI, K
    DOI, A
    AIKI, K
    ITO, R
    [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 252 - 256
  • [2] LIQUID-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY GA1-XALXAS
    CHANDRA, A
    EASTMAN, LF
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 211 - 216
  • [3] LIQUID PHASE EPITAXY OF GA1-XALXAS
    ANDRE, E
    MAHIEU, M
    LEDUC, JM
    [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 13 (MAY) : 663 - &
  • [4] LIQUID-PHASE EPITAXIAL REGROWTH ON SULFIDE-PASSIVATED GA1-XALXAS
    BERKOVITS, VL
    LANTRATOV, VM
    LVOVA, TV
    SHAKIASHVILI, GA
    ULIN, VP
    [J]. APPLIED PHYSICS LETTERS, 1993, 63 (07) : 970 - 972
  • [5] ETCH PITS AND DISLOCATIONS OF GA1-XALXAS LIQUID-PHASE EPITAXIAL LAYERS
    KOMIYA, S
    AKITA, K
    NISHITANI, Y
    ISOZUMI, S
    KOTANI, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3367 - 3369
  • [6] GA1-XALXAS PURIFICATION DURING ITS LIQUID-PHASE EPITAXIAL-GROWTH IN THE PRESENCE OF YB
    RACZYNSKA, J
    FRONC, K
    LANGER, JM
    LISCHKA, K
    PESEK, A
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (08) : 700 - 702
  • [7] CARRIER CONCENTRATION PROFILES IN SI-DOPED LIQUID-PHASE EPITAXIAL GA1-XALXAS
    JOHNSON, WJ
    RADO, WG
    CRAWLEY, RL
    AMEY, JE
    [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1311 - 1315
  • [8] NEW RADIATIVE DEEP STATES IN EPITAXIAL GA1-XALXAS
    BHATTACHARYA, PK
    OWEN, SJT
    MARRS, J
    [J]. APPLIED PHYSICS LETTERS, 1980, 36 (08) : 664 - 666
  • [9] MOCVD GROWTH OF GAAS/GA1-XALXAS EPITAXIAL LAYERS FOR MONOLITHIC OPTOELECTRONIC DEVICES
    JONES, MW
    FORBES, N
    [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 466 - 473
  • [10] METALORGANIC VAPOR-PHASE-EPITAXIAL GROWTH OF MG-DOPED GA1-XALXAS LAYERS AND THEIR PROPERTIES
    KOZEN, A
    NOJIMA, S
    TENMYO, J
    ASAHI, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) : 1156 - 1159