NEW RADIATIVE DEEP STATES IN EPITAXIAL GA1-XALXAS

被引：8
|
作者：
BHATTACHARYA, PK [1 ]
OWEN, SJT [1 ]
MARRS, J [1 ]
机构：
[1] TEKTRONIX INC,BEAVERTON,OR 97005
来源：
APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 08期
关键词：
D O I：
10.1063/1.91617
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：664 / 666
页数：3
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