THERMOELECTRIC PROPERTIES OF GA1-XALXAS

被引：13

作者：

HAVA, S ^{[1
]}

HUNSPERGER, R ^{[1
]}

机构：

[1] UNIV DELAWARE,DEPT ELECT ENGN,NEWARK,DE 19711

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 12期

关键词：

D O I：

10.1063/1.334850

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5330 / 5336

页数：7

共 50 条

[1] THERMOELECTRIC PROPERTIES OF GAAS/GA1-XALXAS HETEROJUNCTIONS IN THE FRACTIONAL QUANTUM HALL REGIME
ZEITLER, U
FLETCHER, R
MAAN, JC
FOXON, CT
HARRIS, JJ
WYDER, P
[J]. SURFACE SCIENCE, 1994, 305 (1-3) : 91 - 95
[2] MAGNETOSENSITIVE PROPERTIES OF HETEROJUNCTIONS BASED ON GA1-XALXAS
VIKULIN, IM
IRKHA, VI
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (08): : 924 - 925
[3] Effect of doping on Ga1-xAlxAs structural properties
BakMisiuk, J
Domagala, J
Paszkowicz, W
Trela, J
Zytkiewicz, ZR
Leszczynski, M
Reginski, K
Muszalski, J
Hartwig, J
Ohler, M
[J]. ACTA PHYSICA POLONICA A, 1997, 91 (05) : 911 - 915
[4] IMPLANTATION OF SELENIUM INTO GA1-XALXAS
FAVENNEC, PN
HENRY, L
JANICKI, T
[J]. ELECTRONICS LETTERS, 1977, 13 (12) : 338 - 339
[5] ELECTRICAL PROPERTIES OF PROTON-BOMBARDED GA1-XALXAS
FAVENNEC, PN
DIGUET, D
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (10) : 546 - 547
[6] MAGNESIUM DOPING OF GA1-XALXAS
DAWSON, LR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : C127 - C127
[7] DISORDER EFFECTS IN GA1-XALXAS
WANG, XJ
ZHANG, XY
[J]. SOLID STATE COMMUNICATIONS, 1986, 59 (12) : 869 - 872
[8] GAAS/GA1-XALXAS AND GA1-XALXAS/GAAS HETEROINTERFACES GROWN BY MOLECULAR-BEAM EPITAXY
ALEXANDRE, F
LIEVIN, JL
MEYNADIER, MH
DELALANDE, C
[J]. SURFACE SCIENCE, 1986, 168 (1-3) : 454 - 461
[9] DIFFUSION OF ZINC INTO GA1-XALXAS
AGENO, SK
ROEDEL, RJ
MELLEN, N
ESCHER, JS
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (11) : 1193 - 1195
[10] WAVELENGTH MODULATION SPECTROSCOPY OF GA1-XALXAS
LANDE, R
MADELON, R
HAIRIE, A
FORTINI, A
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (03): : 483 - 485

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