ETCH PITS AND DISLOCATIONS OF GA1-XALXAS LIQUID-PHASE EPITAXIAL LAYERS

被引：12

作者：

KOMIYA, S ^{[1
]}

AKITA, K ^{[1
]}

NISHITANI, Y ^{[1
]}

ISOZUMI, S ^{[1
]}

KOTANI, T ^{[1
]}

机构：

[1] FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 07期

关键词：

D O I：

10.1063/1.323096

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3367 / 3369

页数：3

共 50 条

[1] LIQUID-PHASE EPITAXIAL REGROWTH ON SULFIDE-PASSIVATED GA1-XALXAS
BERKOVITS, VL
LANTRATOV, VM
LVOVA, TV
SHAKIASHVILI, GA
ULIN, VP
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (07) : 970 - 972
[2] LIQUID-PHASE EPITAXIAL-GROWTH OF GA1-XALXAS ON CHANNELED SUBSTRATES
FUNAKOSHI, K
DOI, A
AIKI, K
ITO, R
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 252 - 256
[3] LIQUID PHASE EPITAXIAL GROWTH OF GA1-XALXAS
WOODALL, JM
RUPPRECHT, H
REUTER, W
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) : 899 - +
[4] LIQUID-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY GA1-XALXAS
CHANDRA, A
EASTMAN, LF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 211 - 216
[5] CARRIER CONCENTRATION PROFILES IN SI-DOPED LIQUID-PHASE EPITAXIAL GA1-XALXAS
JOHNSON, WJ
RADO, WG
CRAWLEY, RL
AMEY, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1311 - 1315
[6] GA1-XALXAS PURIFICATION DURING ITS LIQUID-PHASE EPITAXIAL-GROWTH IN THE PRESENCE OF YB
RACZYNSKA, J
FRONC, K
LANGER, JM
LISCHKA, K
PESEK, A
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (08) : 700 - 702
[7] GA1-XALXAS WAVEGUIDES GROWN BY SELECTIVE LIQUID-PHASE EPITAXY
BELLAVANCE, DW
CAMPBELL, JC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) : C268 - C268
[8] THICKNESS CONTROL OF GA1-XALXAS LAYERS GROWN BY LIQUID-PHASE EPITAXY AT LOW GROWTH TEMPERATURE
TODOROKI, S
OHBU, I
KASHIWADA, Y
[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 85 (03) : 461 - 468
[9] LIQUID PHASE EPITAXY OF GA1-XALXAS
ANDRE, E
MAHIEU, M
LEDUC, JM
[J]. JOURNAL OF CRYSTAL GROWTH, 1971, 13 (MAY) : 663 - &
[10] STRUCTURE AND COMPOSITION OF INTERFACES BETWEEN GA1-XALXAS AND GAAS-LAYERS GROWN BY LIQUID-PHASE EPITAXY (LPE)
PETROFF, PM
LOGAN, RA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1113 - 1117

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