METALORGANIC VAPOR-PHASE-EPITAXIAL GROWTH OF MG-DOPED GA1-XALXAS LAYERS AND THEIR PROPERTIES

被引：29

|

作者：

KOZEN, A

NOJIMA, S

TENMYO, J

ASAHI, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 04期

关键词：

D O I：

10.1063/1.337032

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1156 / 1159

页数：4

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