ALGAAS/GAINAS STRAINED-BASE PNP HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：5
|
作者：
HILL, DG
LEE, WS
MA, T
HARRIS, JS
机构：
来源：
ELECTRONICS LETTERS | 1989年 / 25卷 / 15期
关键词：
D O I：
10.1049/el:19890664
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：993 / 995
页数：3
相关论文
共 50 条
  • [1] DC CHARACTERISTICS OF PNP ALGAAS/GAAS NARROW-BASE HETEROJUNCTION BIPOLAR-TRANSISTORS
    LIOU, LL
    EZIS, A
    IKOSSIANASTASIOU, K
    EVANS, KR
    STUTZ, CE
    JONES, RL
    [J]. ELECTRONICS LETTERS, 1989, 25 (20) : 1396 - 1398
  • [2] RELIABILITY OF ALINAS/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    HAFIZI, M
    STANCHINA, WE
    METZGER, RA
    JENSEN, JF
    WILLIAMS, F
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (12) : 2178 - 2185
  • [3] USE OF PSEUDOMORPHIC GAINAS IN HETEROJUNCTION BIPOLAR-TRANSISTORS
    ENQUIST, PM
    RAMBERG, LP
    NAJJAR, FE
    SCHAFF, WJ
    KAVANAGH, KL
    WICKS, GW
    EASTMAN, LF
    [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 378 - 382
  • [4] THEORETICAL COMPARISON OF DONOR-DENSITY GRADED BASE AND UNIFORMLY DOPED BASE IN PNP ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    LIU, W
    [J]. SOLID-STATE ELECTRONICS, 1992, 35 (11) : 1573 - 1577
  • [5] BASE AND COLLECTOR LEAKAGE CURRENTS OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    LIOU, JJ
    HUANG, CI
    BAYRAKTAROGLU, B
    WILLIAMSON, DC
    PARAB, KB
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (05) : 3187 - 3193
  • [6] CHANGES IN COLLECTOR AND BASE CURRENTS FOR ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    IIZUKA, N
    SUGIYAMA, T
    OBARA, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (6A): : 3377 - 3382
  • [7] PHOTOLUMINESCENCE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    EDA, K
    INADA, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) : 4236 - 4243
  • [8] INP/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH IMPROVED ELECTRICAL CHARACTERISTICS GROWN ON STRAINED BUFFER LAYERS
    EMEIS, N
    BENEKING, H
    [J]. ELECTRONICS LETTERS, 1987, 23 (06) : 295 - 296
  • [9] IS NPN OR PNP THE BETTER CHOICE FOR MILLIMETER-WAVE ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    GAO, GB
    ROULSTON, DJ
    MORKOC, H
    [J]. SOLID-STATE ELECTRONICS, 1990, 33 (09) : 1209 - 1210
  • [10] BE DIFFUSION AT THE EMITTER-BASE JUNCTION OF GRADED ALINAS/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    METZGER, RA
    HAFIZI, M
    WILSON, RG
    STANCHINA, WE
    JENSEN, JF
    MCCRAY, LG
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06): : 2347 - 2350
12345