CHANGES IN COLLECTOR AND BASE CURRENTS FOR ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引:1
|
作者
IIZUKA, N
SUGIYAMA, T
OBARA, M
机构
[1] Toshiba R and D Center, Saiwai-ku, Kawasaki, 210
关键词
HETEROJUNCTION; BIPOLAR TRANSISTOR; HBT; ALGAAS; GAAS; DEGRADATION; DIFFUSION; RECOMBINATION; MBE; ION IMPLANTATION;
D O I
10.1143/JJAP.33.3377
中图分类号
O59 [应用物理学];
学科分类号
摘要
The changes in the collector and base currents after a 5-min operation with a collector current density of more than 2.5 x 10(4) A/cm(2) has been investigated for AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with a Be doped base layer. Their dependence on the V/III flux ratio during molecular beam epitaxy (MBE) growth and on ion implantation conditions for emitter isolation were examined. A larger change in the collector current was observed for HBTs which were grown under a lower V/III ratio or fabricated under a heavier implantation condition. A change in the base current has also been found even when the change in the collector current was small. The change has been attributed to a decrease in the non-radiative recombination rate. A high V/III flux ratio growth and a low damage implantation are needed to suppress the changes.
引用
收藏
页码:3377 / 3382
页数:6
相关论文
共 50 条