BASE AND COLLECTOR LEAKAGE CURRENTS OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引:20
|
作者
LIOU, JJ
HUANG, CI
BAYRAKTAROGLU, B
WILLIAMSON, DC
PARAB, KB
机构
[1] WRIGHT LAB,SOLID STATE ELECTR DIRECTORATE,WRIGHT PATTERSON AFB,OH 45433
[2] ROME LAB,ELECTROMAGNET & RELIABIL DIRECTORATE,GRIFFISS AFB,NY 13422
关键词
D O I
10.1063/1.357502
中图分类号
O59 [应用物理学];
学科分类号
摘要
Base and collector leakage currents are extremely important to AlGaAs/GaAs heterojunction bipolar transistor (HBT) dc characteristics, and a simple model to describe such currents is presented. This study suggests that these currents are originated from the electron and hole leakage through the dielectric-layer (e.g., polyimide, nitride, etc.) interface at the emitter-base and base-collector peripheries, as well as through the n+-subcollector/semi-insulating substrate interface. Five HBTs having similar intrinsic make-ups (i.e., doping concentration and layer thickness) but different extrinsic make-ups (i.e., finger pattern, perimeter, dielectric layer, etc.) are investigated, and with the aid of the model, the possible mechanisms contributing to their leakage behavior identified.
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页码:3187 / 3193
页数:7
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