USE OF PSEUDOMORPHIC GAINAS IN HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：6
|
作者：
ENQUIST, PM [1 ]
RAMBERG, LP [1 ]
NAJJAR, FE [1 ]
SCHAFF, WJ [1 ]
KAVANAGH, KL [1 ]
WICKS, GW [1 ]
EASTMAN, LF [1 ]
机构：
[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
来源：
JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期
关键词：
The authors would like to acknowledge the expert assistance of J. Berry. This work was supported in part by IBM and Brush-Weliman;
D O I：
10.1016/0022-0248(87)90420-9
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
9
引用
收藏
页码：378 / 382
页数：5
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