The Improvement of Reliability of High-k/Metal Gate pMOSFET Device with Various PMA Conditions

被引：2
|
作者：
Yang, Yi-Lin [1 ]
Zhang, Wenqi [2 ]
Cheng, Chi-Yun [2 ]
Yeh, Andwen-Kuan [2 ]
机构：
[1] Natl Kaohsiung Normal Univ, Dept Elect Engn, Kaohsiung 824, Taiwan
[2] Natl Univ Kaohsiung, Dept Elect Engn, Kaohsiung 824, Taiwan
来源：
ACTIVE AND PASSIVE ELECTRONIC COMPONENTS | 2012年 / 2012卷
关键词：
D O I：
10.1155/2012/872494
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The oxygen and nitrogen were shown to diffuse through the TiN layer in the high-k/metal gate devices during PMA. Both the oxygen and nitrogen annealing will reduce the gate leakage current without increasing oxide thickness. The threshold voltages of the devices changed with various PMA conditions. The reliability of the devices, especially for the oxygen annealed devices, was improved after PMA treatments.
引用
收藏
页数：4
相关论文
共 50 条
  • [41] Reliability Improvement of 28-nm High-k/Metal Gate-Last MOSFET Using Appropriate Oxygen Annealing
    Yang, Yi-Lin
    Zhang, Wenqi
    Cheng, Chi-Yun
    Huang, Yi-Ping
    Chen, Pin-Tseng
    Hsu, Chia-Wei
    Chin, Li-Kong
    Lin, Chien-Ting
    Hsu, Che-Hua
    Lai, Chien-Ming
    Yeh, Wen-Kuan
    IEEE ELECTRON DEVICE LETTERS, 2012, 33 (08) : 1183 - 1185
  • [42] High-k/Metal Gate Stacks in Gate First and Replacement Gate Schemes
    Kesapragada, Sree
    Wang, Rongjun
    Liu, Dave
    Liu, Guojun
    Xie, Zhigang
    Ge, Zhenbin
    Yang, Haichun
    Lei, Yu
    Lu, Xinliang
    Tang, Xianmin
    Lei, Jianxin
    Allen, Miller
    Gandikota, Srinivas
    Moraes, Kevin
    Hung, Steven
    Yoshida, Naomi
    Chang, Chorng-Ping
    2010 IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE, 2010, : 256 - 259
  • [43] IMEC pushes high-k/metal gate performance
    不详
    INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS, 2004, 34 (01): : 77 - 78
  • [44] SEMATECHo ptimizes the gate stack with dual high-k and metal gate
    不详
    SOLID STATE TECHNOLOGY, 2006, 49 (10) : 22 - 22
  • [45] Gate Leakage in Hafnium Oxide High-k Metal Gate nMOSFETs
    Rao, Ashutosh
    Mukhopadhyay, Gautam
    2013 2ND INTERNATIONAL CONFERENCE ON ADVANCES IN ELECTRICAL ENGINEERING (ICAEE 2013), 2013, : 389 - 394
  • [46] Carrier scattering in high-k/metal gate stacks
    Zeng, Zaiping
    Triozon, Francois
    Niquet, Yann-Michel
    JOURNAL OF APPLIED PHYSICS, 2017, 121 (11)
  • [47] Dependence of PMOS metal work functions on surface conditions of high-K gate dielectrics
    Jha, R
    Lee, B
    Chen, B
    Novak, S
    Majhi, P
    Misra, V
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST, 2005, : 47 - 50
  • [48] Inversion mobility and gate leakage in high-k/metal gate MOSFETs
    Kotlyar, R
    Giles, MD
    Matagne, P
    Obradovic, B
    Shrifen, L
    Stettler, M
    Wang, E
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 391 - 394
  • [49] Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure
    Wang, Xiaolei
    Han, Kai
    Wang, Wenwu
    Chen, Shijie
    Ma, Xueli
    Chen, Dapeng
    Zhang, Jing
    Du, Jun
    Xiong, Yuhua
    Huang, Anping
    APPLIED PHYSICS LETTERS, 2010, 96 (15)
  • [50] Plasma etching of high-k and metal gate materials
    Nakamura, Keisuke
    Kitagawa, Tomohiro
    Osari, Kazushi
    Takahashi, Kazuo
    Ono, Kouichi
    VACUUM, 2006, 80 (07) : 761 - 767
12345