共 50 条
- [1] High performance FDSOI CMOS technology with metal gate and high-k Doris, B. (dorisb@us.ibm.com), 2005, (Institute of Electrical and Electronics Engineers Inc.):
- [2] Performance and reliability of advanced High-K/Metal gate stacksMICROELECTRONIC ENGINEERING, 2009, 86 (7-9) : 1609 - 1614Garros, X.Casse, M.Reimbold, G.Rafik, M.Martin, F.Andrieu, F.Cosnier, V.Boulanger, F.
- [3] High performance FDSOI CMOS technology with metal gate and high-k2005 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2005, : 214 - 215Doris, BKim, YHLinder, BPSteen, MNarayanan, VBoyd, DRubino, JChang, LSleight, JTopol, ASikorski, EShi, LWong, KBabich, KZhang, YKirsch, PNewbury, JWalker, GFCarruthers, RD'Emic, CKozlowski, PJammy, RGuarini, KWLeong, M
- [4] Metal gate and high-k gate dielectrics for sub 50 nm high performance MOSFETsELECTRONIC MATERIALS LETTERS, 2007, 3 (02) : 75 - 85Park, HokyungHasan, MusarratJo, MinseokHwang, Hyunsang
- [5] Impact of Strain on the Performance of high-k/metal replacement gate MOSFETsULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON, 2009, : 289 - 292Wang, XingshengRoy, ScottAsenov, Asen
- [6] A New Method for Enhancing High-k/Metal-Gate Stack Performance and Reliability for High-k Last IntegrationIEEE ELECTRON DEVICE LETTERS, 2013, 34 (02) : 295 - 297Yew, K. S.Ang, D. S.Tang, L. J.
- [7] Chemical and physical limits on the performance of metal silicate high-k gate dielectricsMICROELECTRONICS RELIABILITY, 2001, 41 (07) : 937 - 945Lucovsky, GRayner, GBJohnson, RS
- [8] Identifying Performance-Critical Defects in High-k/Metal Gate StacksPHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 6, 2008, 16 (05): : 395 - +Bersuker, G.Heh, D.Price, J.Neugroschel, A.Tseng, H. -H.Jammy, R.
- [9] High-k/Metal Gate Stacks in Gate First and Replacement Gate Schemes2010 IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE, 2010, : 256 - 259Kesapragada, SreeWang, RongjunLiu, DaveLiu, GuojunXie, ZhigangGe, ZhenbinYang, HaichunLei, YuLu, XinliangTang, XianminLei, JianxinAllen, MillerGandikota, SrinivasMoraes, KevinHung, StevenYoshida, NaomiChang, Chorng-Ping
- [10] Gate-first High-k/Metal Gate DRAM Technology for Low Power and High Performance Products2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2015,Sung, MinchulJang, Se-AugLee, HyunjinJi, Yun-HyuckKang, Jae-IlJung, Tae-OAhn, Tae-HangSon, Yun-IkKim, Hyung-ChulLee, Sun-WooLee, Seung-MiLee, Jung-HakBaek, Seung-BeomDoh, Eun-HyupCho, Heung-JaeJang, Tae-YoungJang, Il-SikHan, Jae-HwanKo, Kyung-BoLee, Yu-JunShin, Su-BumYu, Jae-SeonCho, Sung-HyukHan, Ji-HyeKang, Dong-KyunKim, JinsungLee, Jae-SangBan, Keun-DoYeom, Seung-JinNam, Hyun-WookLee, Dong-KyuJeong, Mun-MoKwak, ByungilPark, JeongsooChoi, KisikPark, Sung-KyeKwak, Noh-JungHong, Sung-Joo