CONTACT EFFECTS IN GUNN DIODES

被引：9
|
作者：
GURNEY, WSC
机构：
来源：
ELECTRONICS LETTERS | 1971年 / 7卷 / 24期
关键词：
D O I：
10.1049/el:19710488
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It is shown how the splitting of the forward and reverse current/voltage curves of a Gunn diode may be interpreted in terms of different models of contact damage. A simple test technique to obtain a quantitative measure of contact quality is proposed. Experimental verification of this technique is presented, showing a correlation between device efficiency and a contact parameter !.
引用
收藏
页码：711 / &
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