CONTACT EFFECTS IN GUNN DIODES

被引:9
|
作者
GURNEY, WSC
机构
关键词
D O I
10.1049/el:19710488
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
It is shown how the splitting of the forward and reverse current/voltage curves of a Gunn diode may be interpreted in terms of different models of contact damage. A simple test technique to obtain a quantitative measure of contact quality is proposed. Experimental verification of this technique is presented, showing a correlation between device efficiency and a contact parameter !.
引用
收藏
页码:711 / &
相关论文
共 50 条