SMALL-SIGNAL NOISE BEHAVIOR OF COMPANION P+-N-P+ AND P+-N-V-P+ PUNCHTHROUGH MICROWAVE DIODES

被引：10
|
作者：
BJORKMAN, G
SNAPP, CP
机构：
来源：
ELECTRONICS LETTERS | 1972年 / 8卷 / 20期
关键词：
D O I：
10.1049/el:19720364
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：501 / &
相关论文
共 50 条
  • [21] Novel multiple lateral polysilicon p+-n-n+ and p+-p-n+ diodes
    Karnik, SV
    Alexander, S
    Bruce, W
    Hatalis, MK
    [J]. FLAT PANEL DISPLAY TECHNOLOGY AND DISPLAY METROLOGY II, 2001, 4295 : 120 - 124
  • [22] COMPARISON BETWEEN N+-P-P+ AND P+-N-N+ SILICON IMPATT DIODES
    LEE, CM
    HADDAD, GI
    LOMAX, RJ
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (02) : 137 - 141
  • [23] STUDY OF THE SMALL-SIGNAL COMPLEX IMPEDANCE OF N-P-I-STRUCTURE
    AMIRKHANOV, AV
    FURSIN, GI
    [J]. RADIOTEKHNIKA I ELEKTRONIKA, 1979, 24 (09): : 1893 - 1903
  • [24] P+-N-P+型I2L的研制
    [J]. 半导体技术, 1979, (Z1) : 90 - 97
  • [25] NOISE IN P-I-N JUNCTION DIODES
    PERALA, RA
    VANDERZI.A
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (03) : 172 - &
  • [26] 1/F NOISE IN N+-P DIODES
    VANDERZIEL, A
    HANDEL, PH
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) : 1802 - 1805
  • [27] Performance of InGaAs photodetectors: Lateral p-n and p-n-p diodes
    Klockenbrink, R
    Peiner, E
    Bartels, A
    Wehmann, HH
    Schlachetzki, A
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (12) : 1480 - 1482
  • [28] P-N-P VARIABLE CAPACITANCE DIODES
    GIBBONS, JF
    PEARSON, GL
    [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1960, 48 (02): : 253 - 255
  • [29] APPROXIMATE COMPARISON BETWEEN N+-P-P+ AND P+-N-N+ SILICON TRAPATT DIODES
    HADDAD, GI
    LEE, CM
    SCHROEDER, WE
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1973, MT21 (07) : 501 - 502
  • [30] NUMERICAL-ANALYSIS OF NONLINEAR SMALL-SIGNAL DISTORTION IN P-N STRUCTURES
    ALBRECHT, C
    JANSEN, AK
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) : 91 - 98
12345