APPROXIMATE COMPARISON BETWEEN N+-P-P+ AND P+-N-N+ SILICON TRAPATT DIODES

被引：4

作者：

HADDAD, GI ^{[1
]}

LEE, CM ^{[1
]}

SCHROEDER, WE ^{[1
]}

机构：

[1] UNIV MICHIGAN, DEPT ELECT & COMP ENGN, ELECTRON PHYS LAB, ANN ARBOR, MI 48104 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1973年 / MT21卷 / 07期

关键词：

D O I：

10.1109/TMTT.1973.1128046

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：501 / 502

页数：2

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