APPROXIMATE COMPARISON BETWEEN N+-P-P+ AND P+-N-N+ SILICON TRAPATT DIODES

被引：4
|
作者：
HADDAD, GI [1 ]
LEE, CM [1 ]
SCHROEDER, WE [1 ]
机构：
[1] UNIV MICHIGAN, DEPT ELECT & COMP ENGN, ELECTRON PHYS LAB, ANN ARBOR, MI 48104 USA
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1973年 / MT21卷 / 07期
关键词：
D O I：
10.1109/TMTT.1973.1128046
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：501 / 502
页数：2
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