RAPID THERMAL-PROCESSING IN SEMICONDUCTOR TECHNOLOGY

被引：23
|
作者：
HART, MJ
EVANS, AGR
机构：
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1988年 / 3卷 / 05期
关键词：
D O I：
10.1088/0268-1242/3/5/001
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：421 / 436
页数：16
相关论文
共 50 条
  • [41] EFFECTIVE DIFFUSION TIME DURING RAPID THERMAL-PROCESSING
    ARBEL, A
    NATAN, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (03) : 1209 - 1210
  • [42] RAPID THERMAL-PROCESSING AND THIN-FILM TECHNOLOGIES
    MAEX, K
    [J]. MICROELECTRONIC ENGINEERING, 1991, 15 (1-4) : 467 - 474
  • [43] THIN POLYOXIDE FILMS GROWN BY RAPID THERMAL-PROCESSING
    ALVI, NS
    LEE, SK
    KWONG, DL
    [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) : 197 - 199
  • [44] MODELING OF WAFER HEATING DURING RAPID THERMAL-PROCESSING
    KAKOSCHKE, R
    BUSSMANN, E
    FOLL, H
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1990, 50 (02): : 141 - 150
  • [45] COMMERCIAL-SCALE RAPID THERMAL-PROCESSING OF BIOMASS
    FREEL, BA
    GRAHAM, RG
    [J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1993, 205 : 76 - CELL
  • [46] METAL PRECIPITATE DISSOLUTION IN SEMICONDUCTORS BY RAPID THERMAL-PROCESSING
    SPARKS, DR
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C328 - C328
  • [47] A NEW VLSI COMPATIBLE RAPID THERMAL-PROCESSING SYSTEM
    AITKEN, D
    MEHTA, S
    PARISI, N
    RUSSO, CJ
    SCHWARTZ, V
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4): : 622 - 626
  • [48] DEFECT GENERATION AND GETTERING DURING RAPID THERMAL-PROCESSING
    HARTITI, B
    MULLER, JC
    SIFFERT, P
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (01) : 96 - 104
  • [49] LEAD ZIRCONATE TITANATE FILMS BY RAPID THERMAL-PROCESSING
    KUMAR, CVRV
    SAYER, M
    PASCUAL, R
    AMM, DT
    WU, Z
    SWANSTON, DM
    [J]. APPLIED PHYSICS LETTERS, 1991, 58 (11) : 1161 - 1163
  • [50] FORMATION OF TITANIUM SILICIDE FILMS BY RAPID THERMAL-PROCESSING
    POWELL, RA
    CHOW, R
    THRIDANDAM, C
    FULKS, RT
    BLECH, IA
    PAN, JDT
    [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) : 380 - 382
12345