ANALYTICAL MODELING OF THE MOS-TRANSISTOR

被引：34

作者：

GHIBAUDO, G ^{[1
]}

机构：

[1] SACHS & FREEMAN ASSOCIATES INC,LANDOVER,MD 20785

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1989年 / 113卷 / 01期

关键词：

D O I：

10.1002/pssa.2211130127

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：223 / 240

页数：18

共 50 条

[41] AN INTEGRATED CO-SENSITIVE MOS-TRANSISTOR
KREY, D
DOBOS, K
ZIMMER, G
SENSORS AND ACTUATORS, 1983, 3 (02): : 169 - 177
[42] A NEW MEASUREMENT METHOD OF MOS-TRANSISTOR PARAMETERS
CIOFI, C
MACUCCI, M
PELLEGRINI, B
SOLID-STATE ELECTRONICS, 1990, 33 (08) : 1065 - 1069
[43] NOVEL LIGHT-MODULATED MOS-TRANSISTOR
FLYNN, BW
MAVOR, J
OWEN, AE
IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES, 1978, 2 (03): : 94 - 96
[44] MEASURING AND FITTING THE MOS-TRANSISTOR AT HIGH-FREQUENCIES
VANDELOO, P
SANSEN, W
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1988, 37 (04) : 591 - 595
[45] ACCURATE 2 SECTIONS MODEL FOR MOS-TRANSISTOR IN SATURATION
ROSSEL, P
MARTINOT, H
VASSILIEFF, G
SOLID-STATE ELECTRONICS, 1976, 19 (01) : 51 - 56
[46] A NEW APPROACH TO THE CURRENT VOLTAGE CHARACTERISTICS OF A MOS-TRANSISTOR
SIGFRIDSSON, B
SOLID-STATE ELECTRONICS, 1991, 34 (09) : 937 - 944
[47] FREQUENCY VARIATION OF MOS-TRANSISTOR VD=0 ADMITTANCE
PIERRET, RF
SOLID-STATE ELECTRONICS, 1968, 11 (02) : 253 - +
[48] CHARGE COMPONENTS OF THE MOS-TRANSISTOR AND THEIR IMPORTANCE FOR TRANSIENT SIMULATIONS
TAYLOR, GW
FICHTNER, W
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) : 1693 - 1694
[49] A SUBMICROMETER MOS-TRANSISTOR IV MODEL FOR CIRCUIT SIMULATION
MASUDA, H
MANO, JI
IKEMATSU, R
SUGIHARA, H
AOKI, Y
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1991, 10 (02) : 161 - 170
[50] POLYSILICON SOURCE AND DRAIN MOS-TRANSISTOR (PSD MOST)
MIDDELHOEK, J
KOOY, A
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (05) : 523 - 525

← 1 2 3 4 5 →