ANALYTICAL MODELING OF THE MOS-TRANSISTOR

被引：34

作者：

GHIBAUDO, G ^{[1
]}

机构：

[1] SACHS & FREEMAN ASSOCIATES INC,LANDOVER,MD 20785

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1989年 / 113卷 / 01期

关键词：

D O I：

10.1002/pssa.2211130127

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：223 / 240

页数：18

共 50 条

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