CHARGE COMPONENTS OF THE MOS-TRANSISTOR AND THEIR IMPORTANCE FOR TRANSIENT SIMULATIONS

被引：0

|

作者：

TAYLOR, GW ^{[1
]}

FICHTNER, W ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 10期

关键词：

D O I：

10.1109/T-ED.1982.20986

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1693 / 1694

页数：2

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