CHARGE-ORIENTED MODEL FOR MOS-TRANSISTOR CAPACITANCES

被引：2

作者：

WARD, DE ^{[1
]}

DUTTON, RW ^{[1
]}

机构：

[1] STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 11期

关键词：

D O I：

10.1109/T-ED.1978.19306

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1346 / 1346

页数：1

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