CHARGE COMPONENTS OF THE MOS-TRANSISTOR AND THEIR IMPORTANCE FOR TRANSIENT SIMULATIONS

被引：0

|

作者：

TAYLOR, GW ^{[1
]}

FICHTNER, W ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 10期

关键词：

D O I：

10.1109/T-ED.1982.20986

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1693 / 1694

页数：2

相关论文

共 50 条

[31] EVOLUTION OF THE MOS-TRANSISTOR - FROM CONCEPTION TO VLSI
SAH, CT
PROCEEDINGS OF THE IEEE, 1988, 76 (10) : 1280 - 1326
[32] A SIMPLE-MODEL FOR THE MOS-TRANSISTOR IN SATURATION
ELNOKALI, M
MIRANDA, H
SOLID-STATE ELECTRONICS, 1986, 29 (06) : 591 - 596
[33] MODELING THE MOS-TRANSISTOR AT HIGH-FREQUENCIES
SANSEN, W
VANDELOO, P
ELECTRONICS LETTERS, 1986, 22 (15) : 810 - 812
[34] MECHANISM OF FORMATION OF A SPACE-CHARGE REGION IN AN MOS-TRANSISTOR AT 4.2-K
OKHONIN, SA
FRANTSUZOV, AA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (05): : 468 - 470
[35] A MODEL FOR THE SIMULATION OF A 2 MOS-TRANSISTOR INVERTER
FERGUSON, RS
SPREVAK, D
MATHEMATICS AND COMPUTERS IN SIMULATION, 1983, 25 (03) : 249 - 258
[36] A STUDY OF THE TEMPERATURE EFFECT ON MOS-TRANSISTOR (MOSFET)
SINGH, K
DISCOVERY AND INNOVATION, 1994, 6 (03): : 245 - 247
[37] A DC MODEL FOR AN MOS-TRANSISTOR IN THE SATURATION REGION
POORTER, T
SATTER, JH
SOLID-STATE ELECTRONICS, 1980, 23 (07) : 765 - 772
[38] ON THE SHORT-CHANNEL THEORY FOR MOS-TRANSISTOR
CONTI, M
TURCHETTI, C
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (12) : 2657 - 2661
[39] EXPERIMENTAL-DETERMINATION OF THE MOS-TRANSISTOR PARAMETERS
ROSSEL, P
TRANDUC, H
SANCHEZ, JL
BELLAOUAR, A
REVUE DE PHYSIQUE APPLIQUEE, 1983, 18 (08): : 487 - 493
[40] SIMPLE AND ACCURATE SIZE CALCULATION OF MOS-TRANSISTOR
BERNARDSON, P
ELECTRONICS LETTERS, 1982, 18 (14) : 632 - 634

← 1 2 3 4 5 →