PHOTOEMISSION LINESHAPES OF IMPURITY LEVELS IN HEAVILY DOPED SEMICONDUCTORS - P-WAVE RESONANCES

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作者：
BOWEN, MA
DOW, JD
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来源：
SEMICONDUCTORS AND INSULATORS | 1980年 / 5卷 / 02期
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：85 / 89
页数：5
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